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| LTO-DMS MBR20100 thru MBR20200 20 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200 Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings * Operating Junction Temperature: 150C * Storage Temperature: - 55 C to +175C * Per diode Thermal Resistance 2.2C/W Junction to Case Mechanical Data * Case: Molded Plastic * Terminals: Plated Lead Solderable per MIL-STD-202, Method 208 * Marking:Type Number * Weight: 2.24 grams (approx) LTO-DMS Semiconductor Corporation 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696 TO-220AC DIMENSIONS DIM A B C D E F G H I J K L M N INCHES MIN 0.560 0.380 0.100 0.230 0.380 -----0.500 0.190 0.020 0.012 0.139 0.140 0.045 0.080 MAX 0.625 0.420 0.135 0.270 0.420 0.250 0.580 0.210 0.045 0.025 0.161 0.190 0.055 0.115 MIN 14.22 9.65 2.54 5.84 9.65 ----12.70 4.83 0.51 0.30 3.53 3.56 1.14 2.03 MM MAX 15.88 10.67 3.43 6.86 10.67 6.35 14.73 5.33 1.14 0.64 4.09 4.83 1.40 2.92 NOTE Symbol Characteristics MBR20100 MBR20150 MBR20200 Unit VRRM VRM VR(RMS) VF IF(AV) IFSM dv/dt Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Forward Voltage Drop Per Element IF=20A @TJ=25C Average Forward Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load Voltage Rate Of Change (Rated VR) Maximum DC Reverse Current At Rated DC Blocking Voltage TJ=25C TJ=125C 100 100 70 0.90 150 150 105 200 200 140 0.95 V V V V A A V/us mA C/ W pF C C 20 150 10000 0.2 40 2.0 400 -55to+150 -55to+175 IR RthJC CJ TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Revision: 1 2002/06/17 |
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